Samsung 860 QVO Range of Affordable SSDs Launched

Written by Mubarak H.


Samsung on Tuesday propelled its as of late disclosed reasonable strong state drive (SSD) lineup in India, the Samsung 860 QVO SSD. Propelled all around a month ago in 1TB, 2TB, and 4TB limits, the new lineup has been conveyed to India in every one of the three stockpiling limits. The Samsung 860 QVO SSD is based on the organization’s high-thickness 4-bit staggered cell (MLC) NAND streak design, and the organization says the lineup makes “terabyte limits more open to the majority” because of their moderate sticker prices.

Samsung has evaluated the 1TB variation of the 860 QVO SSD at a MSRP of Rs. 11,249. The 2TB model has been evaluated at Rs. 18,749, while the 4TB model has been evaluated at Rs. 32,499. It will go at a bargain in the nation from January 2019. To review, costs in the US began at $149.99 (generally Rs. 10,600). The Samsung 860 QVO SSD (Review) is a SATA-based 2.5-inch SSD highlights 4-bit V-NAND and a MJX controller that can give read accelerates to 550MBps and compose velocities of up to 520MBps.

Furthermore, the SSD accompanies Intelligent TurboWrite innovation, that is professed to quicken speeds while “keeping up superior for longer timeframes.” The continuance of the SSD is appraised at 1,440 TBW (terabytes composed) for the 4TB drive; 720 TBW and 360 TBW for the littler 2TB and 1TB drives, individually.

Sukesh Jain, Senior Vice President, IT and Mobile Enterprise Business, Samsung India, remarked on the dispatch, saying, “There is an ascent sought after for higher limits and more noteworthy execution with regards to capacity gadgets as buyers, today, are creating, sharing and utilizing all the more high goals documents, which incorporate realistic escalated amusements and 4K recordings… Samsung keeps on driving the advance toward multi-terabyte SSDs with the presentation of Samsung 860 QVO, conveying quick execution, extraordinary speed, unwavering quality and incentive to more shoppers around the globe”

About the author

Mubarak H.